| PART |
Description |
Maker |
| BS616LV2018 |
Asynchronous 2M(128Kx16) bits Static RAM
|
BSI
|
| BS62LV4000 |
Asynchronous 4M(512Kx8) bits Static RAM
|
BSI
|
| BS616LV8013 |
Asynchronous 8M(512Kx16) bits Static RAM
From old datasheet system
|
BSI
|
| BS62LV2007 |
Asynchronous 2M(256Kx8) bits Static RAM
From old datasheet system
|
BSI
|
| LC35W1000BTS-70U LC35W1000B LC35W1000BTS-10U LC35W |
Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| BS616LV1611 BS616LV1611FIP70 BS616LV1611FC BS616LV |
Asynchronous 16M(1Mx16) bits Static RAM
From old datasheet system
Very Low Power/Voltage CMOS SRAM 1M X 16 bit 非常低功电压CMOS SRAM00万16
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| IDT72T51333 IDT72T51353 IDT72T51343 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
Integrated Device Technology, Inc.
|
| IDT72T51333L5BB IDT72T51353L6BBI IDT72T51333 IDT72 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
IDT[Integrated Device Technology]
|
| BS62LV4007 BS62LV4007TIP70 BS62LV4007EC BS62LV4007 |
Asynchronous 4M(512Kx8) bits Static RAM
High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel
surface mount silicon Zener diodes
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| IS42S32200B-7TLI IS42S32200B IS42S32200B-6T IS42S3 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS42S16400 IS42S16400A 42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI
Integrated Silicon Solution, Inc
N.A.
|
